| 摘要 |
PURPOSE:To accomplish the manufacture of a flat and uniform film without using a special new equipment by a method wherein a process in which a sputter-formed metal film is selectively left on the groove part or a hole part only of a semiconductor substrate, and another process in which a metal film will be formed by performing a sputtering again on the surface where the metal film is left are performed. CONSTITUTION:A PSG film 2 is formed on the surface of a P-type semiconductor substrate 1, a groove 6 having a large aspect ratio and reaching a semiconductor is provided on the PSG film, and a metal film 3 is provided on the surface including the groove. Then, a photoresist is coated, and a photoresist film 4 having flat surface is formed. Subsequently, after a photolithographic process, in which resist is left, has been performed on the groove part only, the metal film 3 is etched and it is selectively left on the aperture part only. Then, after the photoresist 4 has been removed, the metal film 5 is sputtered again.
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