| 摘要 |
PURPOSE:To electrically connect a fine clear electrode formed on a glass substrate to a connecting bump of a semiconductor chip with high reliability by a method wherein the protruding electrode composed of a specific alloy is constructed on an Al pad of the semiconductor chip via an intermediate metal layer. CONSTITUTION:An Al electrode is formed on a silicon substrate 1 ; a surface- protecting film 3 composed of SiO2 or the like is then formed. An intermediate metal layer 4, which is composed of a barrier layer of Cr, Ti or the like for the Al electrode and of a bonding-strength reinforced layer of Cu, Au or the like, is formed on said Al electrode. These metal layers are formed by, an evaporation method or a nonelectrolytic plating method. Then, a connecting bump 5, whose base material is In-Sn and where the concentration of an element to be added such as Zn, Sb, Al, Ti, Cu or the like is within 10 wt.%, is formed, in the same manner, by the evaporation method, a dip method or a thermal transfer method of a sheet of an alloy foil.
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