| 摘要 |
PURPOSE:To improve the distribution of film thickness as well as the step difference covering by a method wherein a film containing silicon, oxygen and at least one kind of additive element is grown on a substrate to be grown. CONSTITUTION:Microwave power generated by a microwave power generator (magnetron) 9 is led into a plasma producing chamber 2 from a microwave leading-in window 11 through a waveguide 10. O2 is led into the plasma producing chamber 2 from an O2 gas leading-in port 12 while Si4+PH3 is led into a reaction chamber 1 from a material gas leading-in port 13. Within a plasma producing chamber 2, O2 produces ECR plasma by the cyclotron movement of electrons generated in divergence magnetic field of 875 Gauss by microwave of 2.45 GHz and the magnet coil 8 to lead the plasma into the reaction chamber 1 by opening a plasma shutter 14 so that material gas may be decomposed to grow a PSG film on a substrate 4 to be grown.
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