| 摘要 |
PURPOSE:To protect a semiconductor device from corrosion or degraded step coverage attributable to moisture infiltrating into the device by a method wherein a conductive layer is provided on a semiconductor substrate with an interlayer insulating film between and the conductive layer is locally covered by a semiconductor layer. CONSTITUTION:A field oxide film 2 is formed on a semiconductor substrate 1, a gate oxide film 4 is formed in an element forming region, and then a gate 5 and diffusion layer 3 are formed. A process follows wherein an insulating oxide film 2 is formed to cover the entire surface, a connecting window is provided therein, and Al is formed on the entire surface by evaporation. On the Al, polycrystalline silicon is formed by spattering or evaporation, the silicon is subjected to patterning by photoetching or the like for the formation of a two-layer wiring of an Al layer 6 and polycrystalline silicon layer 7. A protecting film 8 for passivation is formed, wherein an opening is provided for a bonding pad. This technique ensures an excellent contact between bonding interfaces and provides an improved coverage and moisture-resistant feature.
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