| 摘要 |
PURPOSE:To enable measurement of a contact resistance with a simple wiring construction, by forming a contact section at both ends of a resistor provided on the surface of a semiconductor substrate. CONSTITUTION:Wire layers 5 and 5 are formed on insulation films 3 respectively formed on the surfaces of a resistor 2 and a semiconductor substrate 1 through contact holes 4 and 4. Contact parts between the wiring layers 5 and 5 and the resistor 2 provide contact sections 6 and 6. Moreover, a part of the insulation films 3 is removed using an etching ion 7 and impurity ions 8 are implanted into an exposed portion of the resistor 2 at a high density to form a highly conductive area 9. Conducting element ions 10 are irradiated on the area 9 to form a conducting film 11. Then, a resistance value is measured between the wiring layers 5 and 5making the area between the contact sections 6 and 6 in the resistor 2 highly conductive by a specified length sequentially. Then, a contact resistance is determined from a resistance value, which is obtained without the existence of the area of the resistor 2 from a relationship between the length of the area of the resistor 2 between the contract sections 6 and 6 excluding the area 9 and a resistance value between the wiring layers 5 and 5.
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