发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To obtain an opening part having an ideal shape and to improve the step coverage of an insulating film by etching it with a resist as a mask to form an opening of predetermined depth in the film, then removing the resist, and etching the film on the whole surface. CONSTITUTION:When a second insulating film 103 is formed on first wirings 102 on a first insulating film 101, the film 103 is formed to be thicker than the necessary thickness of the film to be necessary after the processing thereby to alleviate 'a constriction' of the stepped part 106. Then, with a photoresist 104 as a mask the film 103 is partly etched. Thereafter, after the photoresist 104 is removed, the whole surface of the film 103 is etched, the opening of the film 103 is penetrated to the first wirings 102, and the thickness of the second insulating film is reduced. At this time, if dry etching is executed under suitable condition, the upper end 105 of the hole is formed in a round shape, while the shape of the part 106 can be transferred as the shape before etching as it is.
申请公布号 JPS63122125(A) 申请公布日期 1988.05.26
申请号 JP19860268160 申请日期 1986.11.11
申请人 SEIKO EPSON CORP 发明人 KATAMI KAZUHIKO
分类号 H01L21/302;H01L21/3065;H01L21/3205 主分类号 H01L21/302
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