| 摘要 |
PURPOSE:To form P-type and N-type modulated doped superlattice structures in one superlattice forming step by simultaneously performing P-type and N-type modulated dopings on a substrate formed stereoscopically by an MBE device having two types of P-type and N-type impurity sources having different incident directions and at least two types of material sources. CONSTITUTION:A P-type dopant inlet 1, a silicon material inlet 2 for SiH2, a germanium material inlet 3 for GeH4, and N-type dopant inlet 4 are provided in an MEB device for a modulated doped superlattice structure. A P-type dopant is supplied from a direction 21 while supplying silicon in a direction 22, and an N-type dopant is supplied from a direction 23 into a chamber while supplying the silicon and the germanium from a direction 22. At this time, P-type and N-type impurities are simultaneously charged to a section 24, but since no N-type impurity is incident to the section 24, it is doped in the P-type, and since a P-type impurity is not incident to a section 26, it is doped in N-type.
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