| 发明名称 |
EEPROM memory cell with a single polysilicon level and a tunnel oxide zone. |
| 摘要 |
<p>The memory cell comprises a selection transistor (51), pickup transistor (52) and a tunnel condenser (53) formed using a single layer of polysilicon (59). The tunnel condenser (53) is formed on an active area (56) distinct and separate from that of the pickup transistor (52).</p> |
| 申请公布号 |
EP0268315(A2) |
申请公布日期 |
1988.05.25 |
| 申请号 |
EP19870202039 |
申请日期 |
1987.10.23 |
| 申请人 |
SGS MICROELETTRONICA S.P.A. |
发明人 |
RIVA, CARLO |
| 分类号 |
H01L21/8247;H01L29/788;H01L29/792 |
主分类号 |
H01L21/8247 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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