| 摘要 |
PURPOSE:To prevent the generation of contamination on the surface of the recessed part of a field region by a method wherein a recessed part is formed on the field region without performing a lift-off process. CONSTITUTION:A thermal oxide film 22 is formed on the element forming region located on an Si substrate 21, and a recessed part 23 is formed on the field region using the film 22 as a mask. Then, the film 22 is removed, and an SiO2 film 25 in the thickness same as or more of the stepping of the recessed part is formed on the whole surface of the substrate. Subsequently, a positive type resist film 26 is formed as a spacer film in the thickness thicker than the stepping of the recessed part 23 of the positive type resist film 26. Then, a mixed resist film 27 is applied as a fluid substance. Subsequently, an etching is performed on the whole surface. At this time, the condition of etching is established in such a manner that the etching speed of the film 25 is faster than that of the film 27. As a result, when the surface of the substrate of the element forming region is exposed, the condition wherein the film 25 is flatly buried in the field region can be obtained. Subsequently, an element forming process is started, gate oxide films 281 and 282 are formed, and gate electrodes 291 and 292 are formed thereon. |
