发明名称 THIN FILM PRODUCING DEVICE
摘要 PURPOSE:To simplify an inline type sputtering device with a loading chamber and unloading chamber and to reduce the cost of forming thin films on substrates by providing a heating gas releasing chamber for substrates in front of the loading chamber of said device. CONSTITUTION:The substrates made of plastics such as polycarbonate substrates 2 release a large amt. of gas and, therefore, a vacuum gas releasing chamber is heretofore used, but since this chamber necessitates a large initial cost, trays 1 mounted with the substrates 2 are put into the heating gas releasing chambers 4 and are heated by IR heaters 5 to release the gas from the substrates. The gas is discharged from a discharge pipe 6. Such substrates are cooled and are then put into 1st, 2nd 3rd sputtering chambers 8, 9, 10 where the thin films are formed by sputtering on the substrates 2. The substrates are passed through the unloading chamber 11 and are taken to the outside. Since the time necessary for the gas releasing of the polycarbonates 2 is 24hr and the tact time is 30min, the chamber 4 is formed to the inside volume to accommodate 48 sheets of the trays 1 mounted with the substrates 2. The unloading chamber 1 is required to made to the size as small as to accommodate one sheet of the tray 1. While the equipment is thereby simplified in construction, the gas releasing of the substrates necessitates mere heating and, therefore, the initial cost is reduced.
申请公布号 JPS63121664(A) 申请公布日期 1988.05.25
申请号 JP19860267064 申请日期 1986.11.10
申请人 SEIKO EPSON CORP 发明人 SHIMIZU NOBUO
分类号 C23C14/56 主分类号 C23C14/56
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