| 摘要 |
PURPOSE:To obtain ions having the large current and high energy without using a DC high-voltage accelerator by providing a high-frequency multi-pole linear accelerator feeding energy to ions guided from an ion source and irradiating them to a target. CONSTITUTION:This device is constituted of an ion source 10 generating ions 60, an incoming side analysis magnet 20 cutting off impurity ions among the ions 60 and allowing only the ions 60 to pass, a high-frequency multi-pole linear accelerator 30 feeding energy to the ions 60, and an outgoing side analysis magnet 40 cutting off neutralized impurities among the ions 61 fed with energy and guiding only the ions 61 to be implanted to the target 51 of an end station 50, and ducts 70 are provided between them respectively. Since it is constituted of the high-frequency multi-pole linear accelerator, ions having the high current and high energy can be obtained, thus deep ion implantation can be performed with a high throughput.
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