| 发明名称 |
Silicide to silicon bond. |
| 摘要 |
<p>A bonding layer comprising amorphous silicon, titanium, chromium, or tungsten, is used between the silicide and the N+ polysilicon layer. The bonding layer is preferably less than 50 nm. thick. After the bonding layer is deposited, a silicide layer is deposited and the wafer is then sintered at 900-1000 DEG C for ten minutes or less.</p> |
| 申请公布号 |
EP0268027(A1) |
申请公布日期 |
1988.05.25 |
| 申请号 |
EP19870112236 |
申请日期 |
1987.08.24 |
| 申请人 |
SPECTRUM CVD, INC. |
发明人 |
PRICE, J.B.;CHOW, YU CHANG;MENDONCA, JOHN;WU, SCHYI-YI |
| 分类号 |
H01L21/3205;H01L21/28;H01L23/52;H01L29/78;(IPC1-7):H01L21/31 |
主分类号 |
H01L21/3205 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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