Solid state image sensor with lateral-type stactic induction transistors

摘要

A solid state image sensor having a number of pixels each including a lateral type static induction transistor (LSITs) and arranged in matrix of mxn, gate terminals of LSITs arranged on respective rows are connected to outputs of a vertical scanning circuit to receive selection signals phi G1, phi G2 . . . phi Gm successively, drain terminals of all LSITs being commonly connected to a video bias voltage source and source terminals of LSITs aligned on respective columns being connected to the ground potential via a load resistor by means of column selection transistors whose gate terminals are connected to outputs of a horizontal scanning circuit to receive selection signals phi S1, phi S2 . . . phi Sn successively. Respective LSITs are selected by the source-gate selection method and a video signal is derived by a source follower configuration.