发明名称 |
Field effect transistor |
摘要 |
This invention relates to the structure of a field effect transistor, which is suitable for liquid crystal display of an active matrix scheme and there is disclosed a new structure for the field effect transistor, in which at least one of the source region and the drain region is of multi-layered structure, in which high impurity concentration portions and low impurity concentration portions are alternately superposed on each other.
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申请公布号 |
US4746961(A) |
申请公布日期 |
1988.05.24 |
申请号 |
US19870059785 |
申请日期 |
1987.06.08 |
申请人 |
HITACHI, LTD. |
发明人 |
KONISHI, NOBUTAKE;MIYATA, KENJI;HOSOKAWA, YOSHIKAZU;SUZUKI, TAKAYA;MIMURA, AKIO |
分类号 |
H01L27/12;G02F1/1368;H01L29/08;H01L29/78;H01L29/786;(IPC1-7):H01L29/78;H01L29/12;H01L29/161 |
主分类号 |
H01L27/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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