| 摘要 |
PURPOSE:To make it possible to simplify a bias charge feeding part and to implement a multiple-element structure, by forming a solid-state electron scanning part in the well region of a substrate, and feeding bias charge from the substrate. CONSTITUTION:In a solid-state electron scanning type image sensing apparatus, a well region is formed in a substrate 3. A bias-charge feeding part 2 and a solid-state electron scanning part 1 are formed in the well region. The bias charge of the bias-charge feeding part 2 is supplied to the solid-state electron scanning part 1 from the substrate. Namely, the p-type well region 3-1 is formed in the bias-charge feeding part in the n-type substrate 3. In this well region 3-1, a VMW electrode (a) and a phiG electrode (b), which are to become the bias- charge feeding part, are formed. Since the bias-charge feeding part having a small area is formed in the simple constitution, in which the p-type well is formed in the substrate, high density in an image sensing device can be implemented. |
