发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 PURPOSE:To prevent through-current conducted during the ineffective period of a function block by constituting a means giving an input signal directly to a P-channel MOSFET gate and an N-channel MOSFET gate and a means applying respectively to other gate of the P-channel and N-channel MOSFET. CONSTITUTION:The titled circuit is provided with a series circuit connecting plural P-channel MOSFETs 1a, 1b connected in series and plural N-channel MOSFETs 2a, 2b of similar connection in series with each other at a signal output point, a DC power supply giving a forward voltage to the circuit, a means applying directly an input signal to the gate of the P-channel MOSFET 1a and the gate of the N-channel MOSFET 2a not connected to the DC power supply, a means applying an input signal changed at an indefinite period to the gate of the P channel MOSFET 16 connected to the DC power supply and a means giving an inverted input signal changed at an indefinite period to the gate of the N-channel MOSFET 2b. Thus, a through-current is prevented independently of other input signal even during the ineffective period of the function block or a single circuit even in any transition period of the input signal.
申请公布号 JPS63120522(A) 申请公布日期 1988.05.24
申请号 JP19860266206 申请日期 1986.11.07
申请人 MITSUBISHI ELECTRIC CORP 发明人 WAKIMOTO KINGO
分类号 H03K19/0948;H01L21/8238;H01L27/092;H01L29/78;H03K19/00 主分类号 H03K19/0948
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