| 摘要 |
PURPOSE:To prevent short circuits between neighboring rear-surface electrode films due to dissolved material from the rear-surface electrode films, by performing the isolation of a semiconductor film, which is continuously formed on a light transmitting conductive oxide film, by the projection of an energy beam in an isolating region, in which an insulating film is arranged at a lower layer. CONSTITUTION:A coupling electrode and a collecting electrode, which is extended from the coupling electrode to a light receiving region, are formed in the coupling region of a light transmitting conductive oxide film. The collecting electrode is covered, and an insulating film is provided for isolating regions, which are isolated into a plurality of regions. A semiconductor film is formed over a plurality of regions on the surface of a substrate including the light transmitting conductive oxide film, the coupling electrode and the insulating film. A rear-surface electrode film is formed on the semiconductor film without dividing the semiconductor film into a plurality of regions. An energy beam is projected from the exposing direction of the rear-surface electrode on the isolating regions, and the energy-applied parts of the rear electrode film and the semiconductor film are removed. Isolating grooves, by which a plurality of regions are isolated, are formed. The energy beam is projected from the exposing direction of the rear-surface electrode film on the coupling region, and the energyapplied part of the rear-surface electrode and the lower coupling electrode are electrically connected. |
