发明名称 |
Method for microfabrication of pattern on substrate using X-ray sensitive resist |
摘要 |
A method for microfabrication of a pattern on a substrate in accordance with the present invention comprises steps of; forming a thin film of X-ray sensitive resist of chlorinated polymethylstyrene on the substrate, wherein the chlorinated polymethylstyrene has an average molecular weight of 400,000-700,000 and a chlorine content of 20-40 wt. % and contains fundamental monomer structure of <IMAGE> where at least one of the atom sites alpha , beta and gamma is occupied by chlorine instead of hydrogen; selectively exposing the film to Pdl alpha radiation; developing the exposed film with ethoxyethanol and/or methoxyethanol.
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申请公布号 |
US4746596(A) |
申请公布日期 |
1988.05.24 |
申请号 |
US19850813864 |
申请日期 |
1985.12.27 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
YOSHIOKA, NOBUYUKI;SUZUKI, YOSHIKI |
分类号 |
G03F7/038;(IPC1-7):G03C5/00 |
主分类号 |
G03F7/038 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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