| 摘要 |
PURPOSE:To improve junction breakdown strength, by implanting impurities into a source or drain region in mask alignment. CONSTITUTION:In the manufacturing process of a semiconductor integrated circuit having an MOS transistor in an input protecting circuit, the source or drain region of the MOS transistor in the input protecting circuit is formed by a mask alignment method. Thereafter an insulating film and a conductive film are laminated and formed. The films are patterned in a desired shape, and a gate insulating film 13 and a gate electrode 14 are formed. With these parts as masks, impurities are implanted, and the source and drain regions of at least another transistor are formed by a self-alignment method. Thus, the impurity concentration in the source or the drain is increased, diffusion resistance is decreased and junction breakdown power due to a drain current is increased. The radius of curvature at the curved junction part of the source or the drain is increased. Thus the electric field in said curved region is allevaited, and the junction breakdown strength can be improved. |
