| 摘要 |
PURPOSE:To reduce the resistance of an electrode, to increase the high-speed transfer frequency of a vertical transfer stage, to improve the reduction effect of vertical smears and to improve a vertical transfer efficiency by a method wherein a transfer electrode constituting a vertical transfer part and a memory part is formed of laminated poly Si and silicide. CONSTITUTION:A transfer electrode constituting a vertical transfer part and a memory part of a solid-state image sensing device having a light-receiving part, a vertical transfer part consisting of charge coupled elements, a memory part provided on the extension of the vertical transfer part, a horizontal transfer part and a charge detecting part is formed of laminated poly Si and silicide. For example, after diffused layers 15-17 are formed in a substrate 14, an insulating film 27 is formed, polycrystalline silicide electrodes 31 and 35 are formed on the upper part threrof and silicide electrodes 32 and 36 are formed thereon. Then, an insulating film 28 is formed, polycrystalline silicide electrodes 33 and 37 are formed on the upper part thereof, silicide electrodes 34 and 38 are formed thereon and an insulating film 29 is formed. After that, a light- shielding aluminum mask 20 is formed and the upper part thereof is further coated with an insulating film 30 for protection. |
