| 摘要 |
PURPOSE:To simplify the manufacture process of a depletion FET and an enhancement FET, by a method wherein after a cap layer is formed partly on a semiconductor layer, and it is recrystallized by radiating laser light, a MISFET is formed on a region which was covered and a region which was not covered. CONSTITUTION:After a polycrystalline or amorphous semiconductor layer 3 of one conductivity type is formed on an insulative layer 2, and partly thereon cap layers 4 and 5 are formed, the semiconductor layer 3 is recrystallized by radiating laser light on the whole surface. Then the cap layers 4 and 5 are eliminated, and MISFET's are formed on a region of the semiconductor layer 6 which was covered by the cap layers 4 and 5 and on a region of the semiconductor layer 6 which was snot coverd. Thereby, without using an ion implantation process, Vth of the MISFET's formed on the same semiconductor layer can be given a difference. Consequently, a depletion FET and an enhancement FET can be formed at the same time by presetting the impurity concentration of a semiconductor layer at a specified value. |
