| 摘要 |
PURPOSE:To obtain the semiconductor device, having excellent dampproof property and durability, provided with a passivation film which gives no change in element characteristics, and having high reliability by a method wherein a silicon nitride film containing boron nitride is provided on a part or on the whole surface of the insulating film formed covering the main body of the semiconductor device. CONSTITUTION:A silicon nitride film containing boron nitride is provided on a part or the whole surface of the insulating film formed on the main body of a semiconductor device in such a manner that it covers the main body of the device whereon a semiconductor element is formed. For example, a silicon nitride film 3 containing boron nitride is provided as a final protective film covering a metal wiring 2. A silicon nitride target containing boron nitride of 4 wt.% is used, for example, for formation of the silicon nitride film 3 containing boron nitride, and a bias sputtering method, in which Ar gas is used as sputtering gas, is also used.
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