发明名称 THIN FILM HYBRID IC
摘要 PURPOSE:To reduce the number of working steps, improve the accuracy and reliability of a formed electric circuit, and make miniaturization possible, by constituting active elements, passive elements and diaphragm type compound thin film resonators on an insulative substrate, and coupling each element applying multilayer film forming technique to constitute an electric circuit. CONSTITUTION:An active element 11, passive elements 12 and 13, and a diaphragm type compound thin film resonator 14 are formed on an insulative substrate 17, and an electric circuit is formed by coupling each element 11-14 applying a multilayer thin film forming technique. For example, a transistor 11, a resistor 12 and a condenser 13 are formed on a silicon wafer 17, and a piezoelectric film 16 such as of ZnO is formed on an oxide film 15 to constitute a piezoelectric resonator 14. The connection between elements is performed in the manner of multilayer applying through hole and via hole techniques which are used in the case of forming a multilayer film.
申请公布号 JPS63120481(A) 申请公布日期 1988.05.24
申请号 JP19860266902 申请日期 1986.11.10
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 MIWA TETSUJI
分类号 H01L41/08;H01L25/16;H01L27/12;H03H9/02 主分类号 H01L41/08
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