| 摘要 |
PURPOSE:To obtain a semiconductor laser whose oscillation threshold current is small, by providing a light emitting quantum well region composed of a quantum well layer, a confinement region composed of a quantum well layer neighbouring with it, and a disordered region in which the quantum well structure forming the confinement region is broken by diffusing impurity. CONSTITUTION:The title device is provided with the following: a light emitting quantum well region 4 composed of one or more quantum well layer, a confinement region 5 composed of one or more quantum well layer neighbouring with the light emitting quantum well region 4, and a disordered region 6 in which the quantum well structure forming the confinement region 5 is broken by diffusing impurity. The layer of the quantum well of the confinement region 5 is made thinner than that of the light emitting quantum well region 4. For example, on a p-type GaAs substrate on which a mesa stripe type groove is made, the following are formed: a p-type GaAs buffer layer 2, a p-type Al0.4Ga0.5 As clad layer 3, light emitting quantum well region 4 composed of 5 periods of GaAs and Al0.3G0.7As, a confinement region 5 composed of 5 periods of GaAs and Al0.3Ga0.7As, a disordered region 6 formed by diffusing zinc, an n-type Al0.4Ga0.5As clad layer 7, etc. |
