| 摘要 |
PURPOSE:To make it possible to manufacture a thin film transistor having a self-aligning property at a low temperature, by patterning first and second lift-off thin films on source and drain regions, and removing a semiconductor thin film, which is deposited later, a gate insulating film and a thin film for a gate electrode by a lift-off method. CONSTITUTION:After a polycrystalline silicon thin film 8 is deposited, a first lift-off thin film 3 is etched. The polycrystalline thin film 8 located on source and drain regions 6 and 7 is removed by a lift-off method. A semiconductor thin film between a source and a drain is made to remain, and the other semiconductor thin film is etched away. A gate insulating film 9 and a thin film 10 for a gate electrode are laminated thereon. A first lift-off thin film 3 is etched. The gate insulating film 9 and the gate electrode thin film 10 located on the source and drain regions 6 and 7 are removed by the lift-off method. A gate electrode 11 is made to remain, and the other gate electrode thin film 10 is etched away. Thereafter, a gate electrode terminal 16 is formed, and a thin film transistor is completed. |
