| 摘要 |
PURPOSE:To form a good ohmic contact having a small contact resistance with the electrode metal by using an ion shower for impurity doping, and adding a process of applying hydrogen ions or hydrogen radicals, thereby enabling an impurity-doped layer having less defects and a clean surface. CONSTITUTION:By doping a semiconductor with an impurity in the form of an ion shower 5 having an energy not greater than 10KeV, an impurity-doped layer 6 having less defects is obtained. In addition, by applying hydrogen ions or hydrogen radicals having an energy not greater than 5KeV simultaneously with or after the ion shower 5, the vicinity of the surface is etched, thereby obtaining an impurity-doped layer which is less contaminated and has an impurity density not greater than 10<21>cm<-3>. With this, the contact resistance with an electrode metal 11 and the like can be made small.
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