| 摘要 |
PURPOSE:To increase the current amplification factor of an inverted transistor of an I<2>L as well as to facilitate the high-speed operation of the I<2>L by a method wherein an insulating film is interposed between the base layer and the emitter layer in the external base region of an N-P-N transistor and the like. CONSTITUTION:An insulating film 5 is selectively formed on a first conductivity type first semiconductor layer 2, a second conductivity type second semiconductor layer 3 is selectively formed on the semiconductor layer 2 and the insulating film 5 and a first conductivity type third semiconductor layer 4 is formed on the first and second semiconductor layers 2 and 3. An impurity source is introduced in the third semiconductor layer 4 and second conductivity type semiconductor layers 6 and 7 are selectively formed on the insulating film 5 and the first semiconductor layer 2. For example, an I<2>L is constituted of an N-P-N transistor using the N-type InP layer 2 as its emitter, the P-type InGaAsP layer 3 as its base and the N-type InP layer 4 as its collector and a P-N-P transistor using the P-type impurity diffused layer 7 as its emitter, the N-type InPlayer 4 as its base and the P-type impurity diffused layer 6 as its collector. |
