| 摘要 |
PURPOSE:To make it possible to suppress occurrence of deviation in threshold value, by providing an amorphous silicon layer including fluorine at an interface between an amorphous silicon active layer and an amorphous insulating film. CONSTITUTION:An amorphous silicon semiconductor layer including hydrogen is bonded with an insulating layer comprising amorphous material. In a thin film semiconductor device having this structure, an amorphous silicon layer including flourine is provided at an interface between the semiconductor layer and the insulating layer. For example, the amorphous silicon layer (a-Si:H layer including flourine) 213 including fluorine is once formed on the insulating layer 204. Thereafter, an a-Si:H semiconductor layer 205 as an active layer is formed on the a-Si:H layer 213. A source electrode 202 and a drain electrode 203 are formed on the a-Si:H semiconductor layer 205 so that the electrodes are separated at an adequate length. Thus, the stable, highly reliable thin film semiconductor device characterized by relatively small deviation in threshold voltage value is obtained. |
