发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To form a stabilized crackless thin film having a non-steep stepping, giving no adverse effect on the process to be followed, and inflicting no bad influence on the base layer by a method wherein a film is formed by coating a liquid after a thin film has been deposited by performing an optical CVD method, or a thin film is deposited by performing an optical CVD method after a thin film has been formed by coating a liquid and applying heat. CONSTITUTION:A light is projected on the atom-containing raw gas of a thin film and a thin film is deposited, and after a liquid, which is formed by dissolving an Si compound into a solvent, has been coated thereon, a thin film is formed by applying heat. Instead of the above-mentioned method, the thin film may be deposited by projecting a light after the thin film has been formed by coating said liquid and applying heat. For example, an SiO2 film 2 is formed on a substrate 1 having recesses and projections using a CVD method, and after the liquid formed by dissolving an Si compound into a solvent has been coated thereon, SiO2 5 is formed by applying beat. Instead of this method, the SiO2 film 5 is formed by heating after the liquid, which is formed by dissolving the Si compound into a solvent, has been coated on the substrate having recesses and projections, and then an Si3N4 film 7 is formed using an optical CVD method. As a result, a flat, steep and stepless surfaced film can be formed on the substrate having roughened surface without inflicting adverse effect on the base layer.
申请公布号 JPS63120427(A) 申请公布日期 1988.05.24
申请号 JP19860266935 申请日期 1986.11.10
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 TANIMURA SHOICHI;YANO KOSAKU;FUJITA TSUTOMU;KAKIUCHI TAKAO;YAMAMOTO HIROSHI
分类号 H01L21/314;H01L21/316 主分类号 H01L21/314
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