| 摘要 |
PURPOSE:To improve the positioning accuracy by forming a mask pattern for forming ion implantation transfer path and a permalloy transfer path simultaneously. CONSTITUTION:Ions such as neon or hydrogen are implanted to the surface of an exposed magnetic thin film 3 by removing insulation layers 6, 4 to form an ion implanting region 21, then a mask pattern 22 made of a permalloy is removed by an etching liquid such as liquid made of nitric acid, ferric chloride and water and the remaining insulation layers 6, 4 are removed by the reactive ion etching. Then a resist pattern 13 formed on the permalloy pattern 11 is removed to complete the magnetic bubble memory element 11. In forming the permalloy pattern 11 forming the permalloy transfer path, a mask pattern 22 to form the ion implantation transfer path is formed at the same time to eliminate the deviation between the permalloy transfer line and the ion implantation transfer path and to improved the alignment accuracy at the junction.
|
