| 摘要 |
PURPOSE:To reduce electrode areas significantly and improve the yield from a unit substrate by more than 5 times by a method wherein semiconductor layers of photosensors and semiconductor layers of thin film transistors which constitute analog switches and shift resisters which drive the photosensors successively are made of material of a specific composition and formed on a same substrate. CONSTITUTION:Semiconductor layers 6 of thin film transistors which are made of material which is composed of at least two components among CdS, CdSe and CdTe and has the same composition as the material of semiconductor layers 3 of photosensors and can be formed and processed simultaneously are formed on an insulating substrate 1 and on gate insulating layers 18 which are made of SiO2, Al2O3, Ta2O5 or the like and are formed on gate electrodes 17 which are made of Cr, Al, Ta or the like. Source electrode 15 and drain electrodes 16 which are made of Al, Cr, In, Au or the like are formed on the semiconductor layers 6. If necessary, contact holes 7 which facilitate connection with other devices are provided. The area occupied by a photosensor part 2, an analog switch part 4 and a shift register part 5 can be very small and the number of electrodes which send signals to the outside can be significantly reduced to about 6 totally including voltage application terminals 8. |
