| 摘要 |
PURPOSE:To make the threshold voltage (VT) in the continuous state of a transistor lower and the threshold voltage (VT) in the discontinuous state of the transistor higher without increasing the occupied area by a method wherein 1st semiconductor device is constituted by a gate electrode, a source region, a drain region and a substrate potential control region and the drain region of 2nd semiconductor device which has the gate electrode and the substrate potential control region of the 1st semiconductor device as the drain region and a source region respectively is connected to the gate electrode of the 1st semiconductor device directly or indirectly. CONSTITUTION:N<+> type regions 2 are formed selectively on the required regions of a P-type Si single crystal substrate 1 by the diffusion of Sb and single crystal Si layers 3 and 4 are formed. A polycrystalline Si film 27 is buried in a recess above an N<+> type diffused layer 26 and P is diffused with a high concentration. After apertures are drilled in the required regions of an SiO2 film 24, wiring material mainly composed of Al is evaporated. By patterning the evaporated wiring material, a ground potential electrode 28, output terminal electrodes 29 and 31, an electric source potential electrode 32, a substrate potential control electrode 30 and so forth are formed. The output terminal electrodes 29 and 31 are connected to each other and the substrate potential control electrode 30 is connected to gate electrodes 6 and 7 to form an input terminal. |
