| 摘要 |
PURPOSE:To prevent the production of hard bubbles at the electrode forming part by implanting ions again to an exposed magnetic thin film in opening a window to an insulation layer. CONSTITUTION:The window 28 is opened by the dry etching method to a 1st insulation layer 13 at least covering a magnetic thin film 12 to form the electrode 26 so as to expose the magnetic thin film 12, and ions of H or Ne are injected to the exposed magnetic thin film 12 to form the ion implantation part 30 to the electrode forming part of the magnetic thin film 12. In forming the pattern made of the permalloy at a 2nd mask level, a permalloy film 24 is formed also on the ion implantation part 30, a resist pattern 29 is formed onto the permalloy film 24 and the electrode 26 is formed by the ion etching method. After the window is opened to the insulation layer, the ion implantation part shaped by the surface of the magnetic thin film is repaired by implanting ions of H or Ne to the exposed magnetic thin film thereby suppressing hard bubbles at the electrode forming part.
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