| 摘要 |
PURPOSE:To form a metal wiring part and an interlayer insulating film, without a void, and to make them flat by selectively growing a metal only at a recessed groove formed at the insulating film. CONSTITUTION:The interval between adjacent recessed grooves 2 for a metal wiring part is of the submicron order. Polycrystalline silicon 3 is deposited on the whole surface by a CVD method. The whole surface of this assembly is coated with a resist film 4; by means of an etching-back method the resist 4 remains only at the grooves 2. The polycrystalline silicon 3 is etched by making use of the resist 4 as a mask so that the polycrystalline silicon 3 remains only on the bottom and the side of the grooves 2. The polycrystalline silicon film 3 is made to react with a gas which has been formed by diluting WF6 with Ar. By making use of a silicon reducing-reaction, tungsten (W) 5 is grown selectively only on the side and the bottom of the recessed grooves 2. Because hydrogen tends to be adsorbed to the surface of a metal and to be ionized during this process, the grooves 2 are buried with the tungsten (W) 5 completely. Because this hydrogen reducing-reaction is completely a surface reaction, the growth is isotropic and no void is grown. As a result, the close adhesiveness of the tungsten (W) 5 at the polycrystalline silicon 3 is enhanced, and the tungsten (W) 5 is never exfoliated.
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