| 摘要 |
PURPOSE:To prevent a Sb rosette from being generated so that an insulated circuit without electrical defects can be manufactured, by coating the SiO2 film's whole surface with a Sb silica film and removing the Sb silica film so that the Sb silica film remains on only a window part of the SiO2 film and thereafter performing heat treatment. CONSTITUTION:A SiO2 film 42 is made to grow on a silicon substrate 41, and a window 43 is formed on a position for Sb diffusion by photolithography. The whole surface is spin-coated with a Sb silica film 44. Step difference 45 is formed between the window 43 part and the part on the SiO2 film 42. Baking is performed thereafter to vaporize a solvent remaining in the Sb silica film 44. Coating and baking processes for the Sb silica film are repeated (three times) so as to flatten the surface. The step difference 45 is made 1000Angstrom or less. Then, etching is performed until the SiO2 film 42 is exposed, and the Sb silica film 44 is made to remain only on the window 43 part. When heat treatment is performed under an atmosphere of an inactive gas which contains oxygen of 5% or so, and a Sb diffusion layer 46 is formed in the silicon substrate 41 by selective diffusion of Sb from the said Sb remaining silica film 44.
|
