| 摘要 |
PURPOSE:To grow a garnet film having sufficiently large thickness by controlling the number of rotation of a substrate in a melt to a specified value in the stage for growing the garnet film contg. a bismuth by a liquid phase epitaxial process. CONSTITUTION:A nonmagnetic garnet substrate 12 is dipped in the melt 11 in the liquid phase epitaxial process, and the garnet film contg. bismuth on both surfaces of the substrate 12 is grown while rotating the substrate 12. If the film thickness on one side of the garnet film contg. bismuth is desired to be >=100mum, the number of rotation of the substrate 12 is held at 20-30rpm during the growth. By this method, the growth of the film thickness is possible even if the time of growth exceeds 5hr without saturating of film thickness. The thick bismuthgarnet film obtd. by this method is used suitably for optical isolator for the near infrared region, etc.
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