| 摘要 |
PURPOSE:To form a circuit, Composed of only transistors, to supply a power- source potential and to easily produce the impedance, in a small pattern area, which is sufficient to prevent an electrostatic breakdown to be caused at a power source by a method wherein a drain electrode and a gate electrode of a second insulated-gate field-effect transistor are connected to each other and, at the same time, are connected to a gate electrode of a first insulated-gate field-effect transistor. CONSTITUTION:A source electrode of a P-type MOSFET 11 is connected to +VDD as a power-source potential; a source electrode of an N-type MOSFET 12 is connected to -VSS as a negative power-source potential. A drain electrode and a gate electrode of the N-type MOSFET 12 are connected to each other and, at the same time, are connected to a gate electrode of the P-type MOSFET 11. By means of said structure, it is possible to surely obtain a positive power- source potential at the drain electrode of the P-type MOSFET and the negative power-source potential at the drain electrode of the N-type MOSFET. |
