| 摘要 |
PURPOSE:To obtain a semiconductor crystal layer whose composition is uniform on a region ranging from a substrate surface in the direction of the crystal layer's thickness and also uniform on the inner surface of the substrate, by horizontally soaking the substrate into melt and next lowering the temperature of the melt to that of crystal precipitation and next pulling up the substrate at a fixed speed toward the melt surface so that the crystal layer is formed. CONSTITUTION:An enclosed container 13 containing melt 12 of mercury.cadmium.tellurium is installed inside a circular heating furnace 11. while a shaft 14 movable up and down is inserted into the melt 12, a substrate jig 15 is used to place a substrate 16 of cadmium tellurium in a horizontal state. A temperature of the melt 12 is lowered to the one suitable for crystal precipitation, and while the substrate 16 is moved at a speed of e.g., 0.1 mm/min or so, constituents of the melt 12 are precipitated in the form of a crystal layer on the surface of the substrate 16. The crystal layer formed on the substrate surface does not change in its composition. When the substrate is moved upwards to form the crystal layer, the constitutional change due to segregation during the formation of the crystal layer is canceled by the constitutional change, due to the melt's specific weight difference, in the depth direction. Thus, the formed semiconductor crystal layer is becomes uniform in its composition in the direction of the layer's thickness.
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