| 摘要 |
PURPOSE:To perform plasma etching and ultraviolet-ray cleaning inside one device, by providing the one device with a means for generation of ultraviolet- rays and a means for production of a plasmatic reactive gas. CONSTITUTION:In a first space 2, bubbling operation of a mercury bubbler 11 is performed by argon from a doping system 13 and so a mercury vapor and an argon gas are introduced to generate ultraviolet-rays. In a second space, argon and/or oxygen (for ashing) or NF3 (for etching) of the like is introduced from the doping system 13 and so a plasmatic reactive gas is produced. Plasma etching, plasma ashing, and photoetching are used singly or jointly on a substrate surface to be treated which is disposed in the space 1. Besides, silicon oxide 21 is formed on a silicon semiconductor of a substrate 10, and a photoresist 22 is formed thereon, and ECR plasma of silicon oxide is used to realize anisotropic etching.
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