| 摘要 |
<p>PURPOSE:To enhance the reliability, without damaging a normal function of a semiconductor device even when its insulating layer is broken by static electricity or the like, by a method wherein a second impurity region, of one conductivity type, to be used for prevention of a short circuit between a conductor layer and a semiconductor substrate is formed on the part located under the conductor layer and excluding at least the semiconductor device on the surface of the semiconductor substrate through a first impurity region of the opposite conductivity type. CONSTITUTION:On the surface of a P-type semiconductor substrate 1a, a wiring part composed of a polycrystalline silicon layer 5 connected to a semiconductor device and a bonding pad part composed of an Al layer 6 are formed through an insulating layer 4 on the region which is intended to prevent a short circuit and is composed of an N-type impurity region 2a and a P-type impurity region 3a surrounded by the region 2a. Accordingly, even when the insulating layer 4 located between a group of the bonding pad and the wiring part and the impurity region 3a is broken by static electricity or the like, the short circuit can be evaded irrespective of the direction of a bias between a group of the Al layer 6 and the polycrystalline silicon layer 5 and the semiconductor substrate 1 because there exists a P-N-P junction composed of the impurity regions 3a and 2a as well as the semiconductor substrate 1.</p> |
