| 摘要 |
PURPOSE:To ensure such a case where the output voltage is not suddenly changed to a low level from a high level with a small capacitive load and vice versa with a large capacitive load respectively, by putting a transistor TR between another TR which works in response to an input signal and a Schottky barrier diode. CONSTITUTION:A Schottky barrier diode SBD npn transistor TR 12 conducts in response to the conduction of an SBD npn TR 4. Then, the current limited by a resistance 14 is supplied as a base current of an SBD npn TR 11. Thus the TR 11 conducts. As a result, the time tf needed for discharge of the load capacity connected to an output to an output terminal 3 is slightly increased. While the discharge is quickly carried out via an SBD npn TR 5 as conventional after conduction of the TR 11 in case a capacitive load is large. Thus the voltage of the terminal 3 is quickly changed to a low level from a high level.
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