| 摘要 |
PURPOSE:To decrease swelling and film thinning in a developing stage by making development with a prescribed developing soln. by using a resist consisting of a homopolymer of a specific monomer or copolymer of said monomer and other radiation decomposition type monomer. CONSTITUTION:The homopolymer of the vinyl monomer expressed by the formula or the copolymer of said monomer and the other radiation decomposition type vinyl monomer (e.g.: trifluoroethyl alpha-chloroacrylate) is used as the positive type resist for radiations. In the formula, R1 denotes methyl, Cl; R2 denotes a (halogenated) alkyl of 1-10C, monovalent hydrocarbon group contg. a normal ratio of Si. After the film consisting of the above-mentioned resist material is exposed by electron rays or the like,the film is developed by using the developing soln. contg. 0.1wt% basic compd. (e.g.: tetramethyl ammonium hydroxide). The swelling and film thinning in the developing stage are then decreased and a high-resolution pattern is formed. |
