| 摘要 |
PURPOSE: To make it possible to measure characteristics in a wafer state, by switching probes to a noise measuring system and an impedance measuring system, and continuously measuring the noise characteristics of a transistor on a wafer, a signal source connected to the transistor and load impedance. CONSTITUTION:A pair of variable input and output impedance converters 4 and 5 are provided. High frequency probes 1 and 2 for measuring the characteristics of a transistor on a wafer 3 are connected to the ends of the variable impedance converter 4 and 5. Coaxial switches 6 and 7 are connected to the other ends of the impedance converters 4 end 5. When the coaxial switches 6 and 7 are switched, the high frequency probes 1 and 2 are switched to a noise measuring system 10 and an impedance measuring system 11. Then the noise characteristics of the transistor on the wafer 3 with respect to the changes in signal source and load impedance are measured. Therefore it is not necessary to fabricate a packages for the chip of the transistor, and the noise of the transistor can be measured in the wafer state.
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