| 摘要 |
PURPOSE:To obtain a semiconductor of high reliability wherein the diffusion length of carrier and the depletion layer length at the time of forming a P-N junction are long, by diffusing group I or group V element into at least one part of the surface of a II-VI compound semiconductor, and forming a P-type semiconductor layer. CONSTITUTION:An N-type II-VI compound semiconductor crystal substrate 11 containing Hg whose carrier density of impurity is more than or equal to 1X10<15>cm<-3> is used. On the N-type semiconductor crystal substrate 11, a surface protection film 15 is formed, a part of which is eliminated by patterning. From over it, P-type impurity of I group or V group is selectively ion-implanted, and an ion-implanted layer is formed in the N-type semiconductor crystal substrate 11. By a heat treatment at a temperature higher than or equal to 200 deg.C in an arbitrary atmosphere, the ion-implanted layer is activated to obtain a P-type semiconductor layer 12. Thereby, even if the vapor pressure of Hg in an atmosphere at the time of heating is not controlled, the diffusion length of carrier at the depletion layer length at the time of forming a P-N junction do not become short.
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