| 摘要 |
<p>PURPOSE:To improve the coverage of a film covering a gate electrode and to prevent short-circuit defects, by forming the gate electrode, which is formed on the surface of a transparent insulating substrate 1 with an ITO film so that the end part of the film becomes narrow toward the upper part, and providing a blackened surface layer. CONSTITUTION:An inverted staggered type thin film transistor has the following parts: a plurality of gate electrodes 2 formed on the surface of a transparent insulating substrate 1; gate bus lines for leading out the gate electrodes; and a drain electrode 6 and a source electrode 6' formed on the upper layer parts of the electrodes (ITO layers) 2. The inversely staggered type thin film transistors are arranged in a matrix pattern in correspondence with picture elements. The gate electrode 2 and the gate bus line have a tapered shape so that the end parts become narrower toward the upper parts. At least surface layer 14 consists of a blackened indium tin oxide film. Thus the film having the excellent coverage for the gate electrode can be formed. Application of a self-aligning method with the gate electrode 2 as a mask can be performed.</p> |
