| 摘要 |
PURPOSE:To make the lifetime of a semiconductor substrate controllable, and simplify an equipment constitution, by spreading a chemical liquid containing iron component on the surface of semiconductor substrate, and performing a heat treatment. CONSTITUTION:An oxide film on the surface of a diode wafer 2 after diffusion surface treatment is eliminated by using a photolithograpy method, and the wafer is cleaned by a chemical treatment. Then the diode wafer 2 is mounted on a spinner head 4 by a spinner method, and silicide-based chemical liquid 1 with iron concentration of 0.001-50g/100cc is dripped on the wafer 2. After that, the spin is applied, and a uniform thin film is formed on the diode wafer 2, which is heated in N2 atmosphere to eliminate volatile components. Then it is introduced into a diffusion furnace set in a specified state, and subjected to a heat treatment. Thereby a simple installation can be obtained, which can easily control lifetime characteristics, is capable of joint use with conventional equipments, and can improve workability.
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