| 摘要 |
PURPOSE:To improve temperature dependence, bias dependence and humidity dependence of electric characteristics, by providing a surface stabilized film in which a phosphorus silicate glass layer is used as a lower layer and a silicon nitride film is used as an upper layer. CONSTITUTION:This device is constituted by an N-type silicon substrate 1, a P-type base diffused region 2, an N-type emitter diffused region 3, a thermal oxide (SiO2 film) 4, a phosphorus silicate glass layer 5 and a silicon nitride film 7. A surface stabilizing film, in which the phosphorus silicate glass layer 5 is used as a lower layer and the silicon nitride film 7 is used as an upper layer, is formed on the semiconductor substrate 1. The temperature dependence and the bias dependence of a semiconductor element are improved by the phosphorus silicate glass layer 5, and humidity dependence is improved by the silicon nitride film 7. Thus the temperature dependence, the bias dependence and the humidity dependence are all improved.
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