| 摘要 |
PURPOSE:To reduce contact resistance, by coating an electrode window with a reducing metal film, and forming an electrode wiring after the film is alloyed by heat treatment. CONSTITUTION:By a sputtering method, a titanium (Ti) film 21 is spread, which is subjected to a heat treatment in an inactive atmosphere at a temperature of about 800 deg.C. Then the Ti film 21 contacting electrode windows 19 and 20 reduces an oxide film and is alloyed. Thus a TiSi2 film 22 is produced. The Ti film 21 only is selectively eliminated by etching, an aluminum film is spread, and a wiring 10 connecting to a drain electrode 9 and a gate electrode composed of aluminum film is formed by patterning. Like this, by coating the electrode window with a metal film with reducing property, and forming the electrode wiring after they are subjected to a heat treatment and alloyed, a natural oxide film in the electrode window is reduced, and a conductive alloy film is formed. By forming the electrode wiring thereon, contact resistance is reduced.
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