| 摘要 |
PCT No. PCT/FR87/00353 Sec. 371 Date May 16, 1988 Sec. 102(e) Date May 16, 1988 PCT Filed Sep. 11, 1987 PCT Pub. No. WO88/02172 PCT Pub. Date Mar. 24, 1988.Electrically programmable non-volatile memories, more currently known as EPROM memories. The memory according to the invention, using floating grid transistors with injection by hot carriers has an architecture which is different from that of conventional memories. Instead of having each transistor connected between a bit line and a mass line to Vss, here each transistor is connected between two adjacent bit lines; for example, in the drawing annexed, the transistor T12 of which the grid is controlled by the word line LM1, has its source connected to the bit line LB1 and its drain connected to the bit line LB2 immediately adjacent to LB1. Advantages result from such an arrangement from the point of view of size, since insulating the drains of the two adjacent transistors by means of a thick oxide is no longer necessary. |
