| 摘要 |
<p>A resist structure used in fabricating microelectronic devices on a substrate by lithography includes three layers, a thick planarizing layer (20) of a polymer material in contact with the substrate (12) and having a generally planar upper surface, a separating layer (26) overlying the planarizing layer (20), and an imaging layer (28) of a resist material overlying the separating layer (26). The separating layer (26) is a light transparent and electrically conductive material, preferably a mixture of indium oxide and tin oxide. An etched resist structure is formed on the substrate (12) by defining and developing a pattern in the imaging layer (28), transferring the pattern to the separating layer (26), and transferring the pattern to the planarizing layer (20).</p> |
